advanced power n-channel enhancement mode electronics corp. power mosfet low gate charge bv dss 60v simple drive requirement r ds(on) 12m fast switching characteristic i d 72a rohs compliant & halogen-free description absolute maximum ratings@t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ e as single pulse avalanche energy 3 mj t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 1.2 /w rthj-a 40 /w rthj-a maximum thermal resistance, junction-ambient 6 2 /w data and specifications subject to change without n otice 201501153 halogen-free product 1 maximum thermal resistance, junction-ambient (pcb m ount) 4 parameter drain-source voltage gate-source voltage drain current, v gs @ 10v drain current, v gs @ 10v ap9974gs/p-hf 45 rating 60 + 20 72 46 pulsed drain current 1 300 total power dissipation 104 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.8 thermal data parameter storage temperature range g d s g d s to-263(s) g d s to-220(p) ap9974 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on-resis tance and fast switching performance. it provides the designer with a n extreme efficient device for use in a wide range of power a pplications. the to-263 package is widely preferred for all commercial-i ndustrial surface mount applications using infrared reflow techniqu e and suited for high current application due to the low connection resis tance. the through-hole version (ap9974gp) are available for low-pro file applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 60 - - v bv dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.07 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =45a - - 12 m v gs =4.5v, i d =30a - - 15 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =30a - 50 - s i dss drain-source leakage current v ds =60v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =30a - 43 69 nc q gs gate-source charge v ds =48v - 8 - nc q gd gate-drain ("miller") charge v gs =4.5v - 31 - nc t d(on) turn-on delay time v ds =30v - 14 - ns t r rise time i d =30a - 48 - ns t d(off) turn-off delay time r g =3.3 - 42 - ns t f fall time v gs =10v - 67 - ns c iss input capacitance v gs =0v - 3180 5100 pf c oss output capacitance v ds =25v - 495 - pf c rss reverse transfer capacitance f=1.0mhz - 460 - pf r g gate resistance f=1.0mhz - 1 1.5 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =45a, v gs =0v - - 1.2 v t rr reverse recovery time i s =30a, v gs =0 v , - 45 - ns q rr reverse recovery charge di/dt=100a/s - 40 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.starting t j =25 o c, l=0.1mh , r g =25 , i as =30a. 4.surface mounted on 1 in 2 copper pad of fr4 board this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. 2 ap9974gs/p-hf
ap9974gs/p-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltag e fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 25 50 75 100 125 0 2 4 6 8 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c 10v 7.0v 5.0v 4.5v v g =3.0v 8 12 16 20 2 4 6 8 10 v gs , gate-to-source voltage (v) r ds(on) (m ? ) i d = 30 a t c =25 o c 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =45a v g =10v 0 10 20 30 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.6 1.2 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0 50 100 150 200 250 0 2 4 6 8 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 5.0v 4.5v v g =3.0v
ap9974gs/p-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 q v g 4.5v q gs q gd q g charge 100 1000 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss 0 2 4 6 8 10 12 0 20 40 60 80 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds = 30 v v ds = 38 v v ds = 48 v i d = 35 a 0 25 50 75 100 125 0 2 4 6 8 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse
marking information to-263 to-220 5 ap9974gs/p-hf part number package code meet rohs requirement for low voltage mosfet only date code (ywwsss) y last digit of the year ww week sss sequence 9974gs ywwsss part number package code meet rohs requirement for low voltage mosfet only 9974gp ywwsss date code (ywwsss) y last digit of the year ww week sss sequence
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